Interaction of oxygen precipitates with structural defects in CZ Si crystals

Abstract

This paper is dealing with the interaction between oxygen precipitates and structural defects in CZ Si crystals. Different lattice defects: dislocation loops, rod-like defects and stacking faults have been observed as a consequence of oxygen precipitation. In turn, these defects also promote the nucleation and growth of the oxygen precipitates. It is shown that the dislocation dipole is more efficient than single dislocation in enhancing the oxygen precipitate formation.