Abstract
CZ-Si crystals were grown under three different cusp magnetic field (CMF) configurations, in which the CMF center was positioned at the melt-free surface, 20 mm above and 20 mm below the melt-free surface; they were thus called the “surface”, “outside”, and “inside” CMF configurations, respectively. The V/ G ratio ( V: growth rate, G: axial temperature gradient) used for the crystal growth under CMF was near 0.07 mm 2/°C min. Oxygen concentration in the CZ-Si crystals was measured and only the inside CMF configuration showed a uniform oxygen distribution. Defects in the CZ-Si crystals were, for the first time, investigated by multi-chroic infrared light scattering tomography. The results showed that the defect density in the CZ-Si crystals is remarkably decreased from a crystal grown under the outside CMF configuration to another grown under the inside CMF configuration and the intensity of light scattered due to the defects in the crystals indicates a similar decreasing tendency. The defects were determined to be interstitial-type, which further agglomerated to form dislocation clusters in the CZ-Si crystals. The experimental results showed that the inside CMF configuration is effective to grow CZ-Si crystals with lower defect density and uniform oxygen distribution.
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