Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapor Deposited Graphene Layers and Boundaries.

Dmitrii Khokhriakov,Saroj P Dash,Subir Parui,Anamul Md Hoque,Bing Zhao,Bogdan Karpiak

doi:10.1021/acsnano.0c07163

Dmitrii Khokhriakov, Saroj P Dash + Show 4 more

Open Access

https://doi.org/10.1021/acsnano.0c07163

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Journal: ACS nano	Publication Date: Nov 2, 2020
Citations: 17	License type: cc-by

Affiliation: Chalmers University of Technology, KU Leuven

Abstract

The utilization of large-area graphene grown by chemical vapor deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic circuits. However, the fundamental influence of the presence of multilayer graphene patches and their boundaries on spin dynamics has not been addressed yet, which is necessary for basic understanding and application of robust spin interconnects. Here, we report universal spin transport and dynamic properties in specially devised single layer, bilayer, and trilayer graphene channels and their layer boundaries and folds that are usually present in CVD graphene samples. We observe uniform spin lifetime with isotropic spin relaxation for spins with different orientations in graphene layers and their boundaries at room temperature. In all of the inhomogeneous graphene channels, the spin lifetime anisotropy ratios for spins polarized out-of-plane and in-plane are measured to be close to unity. Our analysis shows the importance of both Elliott-Yafet and D’yakonov-Perel’ mechanisms with an increasing role of the latter mechanism in multilayer channels. These results of universal and isotropic spin transport on large-area inhomogeneous CVD graphene with multilayer patches and their boundaries and folds at room temperature prove its outstanding spin interconnect functionality, which is beneficial for the development of scalable spintronic circuits.

Highlights

The utilization of large-area graphene grown by chemical vapor deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic circuits
Theoretical investigations predicted that the spin relaxation by CVD-specific defects such as grain boundaries and ripples should not limit the device performance,[27] and experimental studies with continuous CVD graphene channels have confirmed their spin transport capabilities.[28−32] the spin scattering, dynamics, and spin lifetime anisotropy in multilayer CVD samples and their boundaries have not yet been determined experimentally
Our study suggests that inhomogeneities in large-area CVD graphene do not deter its spintronic device performance, showing universally isotropic spin transport properties at room temperature, which makes CVD graphene suitable for the realization of spin interconnects

Summary

Introduction

The utilization of large-area graphene grown by chemical vapor deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic circuits. Our analysis shows the importance of both Elliott-Yafet and D’yakonov-Perel’ mechanisms with an increasing role of the latter mechanism in multilayer channels These results of universal and isotropic spin transport on large-area inhomogeneous CVD graphene with multilayer patches and their boundaries and folds at room temperature prove its outstanding spin interconnect functionality, which is beneficial for the development of scalable spintronic circuits. Theoretical investigations predicted that the spin relaxation by CVD-specific defects such as grain boundaries and ripples should not limit the device performance,[27] and experimental studies with continuous CVD graphene channels have confirmed their spin transport capabilities.[28−32] the spin scattering, dynamics, and spin lifetime anisotropy in multilayer CVD samples and their boundaries have not yet been determined experimentally

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