Abstract
Despite structural and processing-induced imperfections, wafer-scale chemical vapor deposited (CVD) graphene today is commercially available and has emerged as a versatile form that can be readily transferred to desired substrates for various nanoelectronic and spintronic applications. In particular, over the past decade, significant advancements in CVD graphene synthesis methods and experiments realizing high-quality charge and spin transport have been achieved. These include growth of large-grain graphene, new processing methods, high-quality electrical transport with high-carrier mobility, micron-scale ballistic transport, observations of quantum and fractional quantum Hall effect, as well as the spintronic performance of extremely long spin communication over tens of micrometers at room temperature with robust spin diffusion lengths and spin lifetimes. In this short review, we discuss the progress in recent years in the synthesis of high-quality, large-scale CVD graphene and improvement of the electrical and spin transport performance, particularly towards achieving ballistic and long-distance spin transport that show exceptional promise for next-generation graphene electronic and spintronic applications.
Highlights
Since its experimental isolation [1], graphene has emerged as an extraordinary modern material for its superlative electrical and thermal conductivity, mechanical strength, and unique optical properties [2]
This review aims to present a perspective on chemical vapor deposition (CVD) graphene, where we discuss the synthesis method and the electronic and spintronic quality of CVD graphene
It is worth mentioning here that this review only focuses on selected systems to provide a perspective on CVD graphene growth, its utilization for nanoelectronic and spintronic applications, as well as discusses the performance of CVD graphene in terms of the ballistic transport and spin transport capabilities
Summary
Over the past decade, significant advancements in CVD graphene synthesis methods and experiments realizing high-quality charge and spin transport have been achieved These include growth of large-grain graphene, new processing methods, high-quality electrical transport with high-carrier mobility, micron-scale ballistic transport, observations of quantum and fractional quantum Hall effect, as well as the spintronic performance of extremely long spin communication over tens of micrometers at room temperature with robust spin diffusion lengths and spin lifetimes. In this short review, we discuss the progress in recent years in the synthesis of high-quality, large-scale CVD graphene and improvement of the electrical and spin transport performance, towards achieving ballistic and long-distance spin transport that show exceptional promise for next-generation graphene electronic and spintronic applications
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
