Long distance spin communication in chemical vapour deposited graphene.

M Venkata Kamalakar,Christiaan Groenveld,André Dankert,Saroj P Dash

doi:10.1038/ncomms7766

M Venkata Kamalakar, Christiaan Groenveld + Show 2 more

Open Access

https://doi.org/10.1038/ncomms7766

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Journal: Nature Communications	Publication Date: Apr 10, 2015
Citations: 209	License type: cc-by

Affiliation: Chalmers University of Technology

Abstract

Graphene is an ideal medium for long-distance spin communication in future spintronic technologies. So far, the prospect is limited by the smaller sizes of exfoliated graphene flakes and lower spin transport properties of large-area chemical vapour-deposited (CVD) graphene. Here we demonstrate a high spintronic performance in CVD graphene on SiO2/Si substrate at room temperature. We show pure spin transport and precession over long channel lengths extending up to 16 μm with a spin lifetime of 1.2 ns and a spin diffusion length ∼6 μm at room temperature. These spin parameters are up to six times higher than previous reports and highest at room temperature for any form of pristine graphene on industrial standard SiO2/Si substrates. Our detailed investigation reinforces the observed performance in CVD graphene over wafer scale and opens up new prospects for the development of lateral spin-based memory and logic applications.

Highlights

Graphene is an ideal medium for long-distance spin communication in future spintronic technologies
Spin-logic technologies[6] aim to harness this giant spintronic potential for manipulating nanomagnets[7] via spin currents transmitted over long graphene channels. This will potentially bring novel developments in spintronic device designs from the conventional giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) structures where a spin transport of only few nanometre distance is used[6,8]
The challenges involved in chemical vapour-deposited (CVD) graphene device processing and their effect on sensitive spin currents so far resulted in fewer reports with spin parameters limited to tsB200 ps and lsB2 mm with channel length up to 4 mm on Si/SiO2 substrates at room temperature[12,40,41,42]

Summary

Introduction

Graphene is an ideal medium for long-distance spin communication in future spintronic technologies. The challenges involved in CVD graphene device processing and their effect on sensitive spin currents so far resulted in fewer reports with spin parameters limited to tsB200 ps and lsB2 mm with channel length up to 4 mm on Si/SiO2 substrates at room temperature[12,40,41,42]. We demonstrate the long-distance spin transport capability of CVD graphene in channels extending up to 16 mm on SiO2/Si substrate at room temperature.

Results

Conclusion