Abstract
We demonstrate the key features of an interference cathode using both simulations and experiments. We deposit Cs3Sb photocathodes on Ag to produce an interference enhanced photocathode with 2–5× quantum efficiency (QE) enhancement using a robust procedure that requires only a smooth metal substrate and QE monitoring during growth. We grow both an interference cathode (Ag substrate) and a typical photocathode (Si reference substrate) simultaneously to confirm that the effects are due to optical interactions with the substrate rather than photocathode composition or surface electron affinity differences. Growing the cathodes until the QE converges shows both the characteristic interference peaks during growth and the identical limiting case where the cathode is “infinitely thick,” in agreement with simulations. We also grow a cathode until the QE on Ag peaks and then stop the growth, demonstrating broadband QE enhancement.
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