Abstract
Effects of background gas (N2 or SF6) on ripple formation by oblique incidence gas cluster ion beam (GCIB) irradiation were investigated. When N2 gas was introduced as background gas, both ripple structures and the sputtering yield of Si and SiO2 did not change by Ar-GCIB irradiation at 60° incidence. However, wavelength of ripple became larger when SF6 gas was introduced as background gas. Increase of the sputtering yield in SF6 environment correlates with the change of ripple structures. It is assumed that SF6 molecules adsorbed on ripple structures, and Si or SiO2 ripples were etched preferentially.
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