Abstract
We obtain accurate measurements of Ga desorption rate under conditions of Knudsen evaporation between 600 and 630°C from (001) GaAs or A1As using only RHEED. Within two monolayers from an A1As interface the Ga desorption is reduced by a factor of 2.5−3. In another experiment we observe that a partial surface coverage of a GaAs surface by Si has no effect on Ga desorption but increases strongly the As desorption, leading accordingly to a lowering of the transition temperature to a Ga-rich surface.
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