Abstract
Abstract In situ desorption mass spectrometry studies (DMS) of AlGaAs GaAs molecular beam epitaxy (MBE) at high substrate temperatures reveals a rich transient behavior in the Ga desorption signal during the formation of the AlGaAs-on-GaAs interface. In this study we develop Monte Carlo (MC) models for Ga desorption, in which the effects of the AlGa interaction strength and the inclusion of an AlGa surface exchange mechanism are investigated. The models which best describe the experimental observations are identified. The transients in Ga desorption rate at the AlGaAs-on-GaAs interface and the experimentally observed reduction in Ga desorption energy during growth of AlGaAs are explained in terms of the reduction in V III flux ratio accompanying the opening of the Al shutter. The proposed effects of this reduction in V III flux ratio are consistent with the results predicted by the different models.
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