Abstract
We have studied the photoluminescent properties of AlGaAs/GaAs quantum wells grown by molecular beam epitaxy on (411)A GaAs substrates. We found that growth interruption with As supply degrades, whereas that under As-free or low-pressure As conditions improves the flatness of the heterointerface. These characteristics are very different from those for (100) GaAs substrates. The flattening transition under As-free conditions appeared to be related to Ga desorption during the growth interruption. We believe that Ga desorption plays an important role in maintaining flat (411)A surfaces.
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