Abstract
The intensity oscillation of reflection high-energy electron diffraction was observed during the growth of AlxGa1-xAs accompanying the incorporation of As into an Al and Ga mixed layer on a GaAs substrate. The degree of oscillation depends on the Al fraction of the mixed layer and on the substrate temperature. Incorporation of As into Al on an AlAs surface was also investigated to compare with the case of As incorporation into the mixed layer on the GaAs substrate. It was found that mixing of Ga in the Al metal layer strongly lowered the low-temperature limit of the intensity oscillation and also increased the oscillation magnitude. This will be attributed to a large migration of Ga atoms rather than Al atoms.
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