Abstract
Reentrant behavior of intensity oscillation of reflection high-energy electron diffraction (RHEED) observed during low-temperature GaAs homoepitaxy on GaAs (001) substrates is studied by a Monte Carlo simulation using cubic solid-on-solid configuration. By assuming that an excess As overlayer acts as surfactant which enhances the migration of Ga adatoms at low temperature, temperature as well as V/III ratio dependence of step density oscillation (i.e., RHEED intensity oscillation) is successfully reproduced.
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