Abstract
Si(001) surface topography changes during Si molecular beam epitaxy (MBE) were observed by reflection electron microscope images using microprobe reflection high-energy electron diffraction (RHEED). When RHEED intensity oscillations were observed at low substrate temperature (450 °C), it was found that alternate growth of 2×1 and 1×2 surface reconstruction domains occurred with the half period of the intensity oscillations, and the shape of the domains was preserved during MBE. When almost no oscillations were observed at higher substrate temperature (>750°C), atomic step migration occurred during MBE. These results provide direct evidence that RHEED intensity oscillations occur by layer-by-layer two-dimensional nucleation growth.
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