Abstract
High-quality RF-sputtered MgO films as tunnel barriers to fabricate small-area nitride tunnel junctions. A magnetism oxide barrier deposited as a single layer or as a multilayer film results in devices with similar characteristics. Annealing trilayers at temperatures in excess of 250 degrees C for several hours decreases junction current density and improves device quality, presumably by increasing barrier heights through reducing resonant tunneling states. A self-aligned process utilizing only two mask levels is used to produce junctions as small as 0.5 mu m/sup 2/ with excellent critical current uniformity. These junctions exhibit energy gaps of 5.1 mV and low subgap currents at current densities in excess of 1000 A/cm/sup 2/, which make them suitable for a variety of applications such as SIS (superconductor-insulator-superconductor) mixers and logic circuits.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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