Abstract
The crystallinity, chemical bonding, and electrical properties of BaPbO3 (BPO) thin films prepared by rf-magnetron sputtering on SiO2/Si substrates were investigated. The working pressure and the Ar/O2 ratio during sputtering are two of the most important factors that influence the characteristics of the prepared BPO films. Both increasing working pressure and increasing Ar/O2 ratio enhanced the crystallization of the perovskite BPO phase and yielded films with low resistivity. Sputtering in an environment with a working pressure of 80 mTorr and Ar/O2 = 90/10 at 350°C gave deposited BPO films with a low resistivity of 0.9 ×10-3 Ωcm, and a high carrier concentration of 8.3 ×1020 electrons/cm3, which values were almost equal to those of the bulk BaPbO3. X-ray photoelectron spectroscopy (XPS) revealed that Pb4+ ions were formed in the BPO films as the working pressure and the Ar/O2 ratio were increased, enhancing the crystallization of the perovskite BPO phase to yield films of lower resistivity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
