Abstract

We prepared amorphous GaAs (a-GaAs) films by an RF magnetron sputtering method and investigated the influence of working pressure on the structure, composition, optical and electrical properties. The experimental data suggest the films prepared above 0.5 Pa are amorphous and the Ga to As concentration ratio decreases when increasing working pressure .The optical gap, resistivity and photosensitive increase with increasing working pressure. These findings suggest that working gas pressure is very important to control structure, chemical composition, optical and electrical properties of a-GaAs films prepared by magnetron sputtering method. These results were analyzed in terms of the effect of gas pressure on defect and band-tail sta te densities in a-GaAs films.

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