RF & linearity distortion sensitivity analysis of DMG-DG-Ge pocket TFET with hetero dielectric

Abstract

The incorporation of dual-metal, double-gate, germanium pocket and hetero gate dielectric tunnel field effect transistor (DMG-DG-Ge pocket TFET) allows the conceptualization and realization of suppressed ambipolarity. These deployed technology boosters for the TFET tailor the electric field as per the need at source-channel and drain-channel interfaces. The novelty of this work lies in its dual-metal and hetero dielectric structure that are introduced in Ge- pocket TFET structure. The major goal achieved here is enhanced ION/IOFF ratio. Further using the exhaustive and calibrated TCAD analysis, this work examines the analog/RF and linearity distortion performance of DMG-DG-Ge pocket TFET. Here, intrinsic device capacitances, transconductance, cutoff frequency, transgeneration factor (TGF), higher order derivatives of drain current (gm2 and gm3), VIP2, VIP3, IIP3 and IMD3 are being extracted. Effect of different device parameters: channel length, body thickness, oxide thickness and pocket width on the dc, analog/RF and linearity distortion parameters has also been studied. The present analysis reveals an in-depth guideline for the design of DMG-DG-Ge pocket TFET with optimized analog/RF performance with least linearity distortions.