Abstract

An analytical model for double-gate (DG) tunnel FETs (TFETs) using two-dimensional (2-D) solution of Poisson's equation is presented. We derived analytical expressions for the drain current and sub-threshold swing from the maximum electric field using the Kane model. The model is validated via comparing it with TCAD simulation results for different sets of parameters. The results show a good agreement between the model and simulations. The model well predicts the effects of design parameters, such as gate oxide thickness, body thickness, gate oxide dielectric and channel length, on device characteristics which allows us to gain insight on the device operation.

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