RF Extraction of Gate-Voltage Dependence of the Overlap and Fringing Capacitances in Deep-Submicron MOSFETs

Abstract

Listen

Translate article

The gate-voltage dependent radio-frequency (RF) data of the source/drain overlap and fringing capacitances in deep-submicron metal-oxide-semiconductor field-effect transistors (MOSFETs) have been accurately extracted using a new RF method. The outer fringing capacitance is determined by curve-fitting a gate voltage-dependent model equation to the measured gate capacitance data in the accumulation region. RF extraction of the overlap capacitance is performed using a theoretical equation and a linear regression of the measured gate capacitance versus the gate length. Using these extracted capacitances, the inner fringing capacitance is also determined.