RF analysis and noise characterization of junctionless nanowire FETs by a Boltzmann transport equation solver

Abstract

The junctionless nanowire field-effect transistor (JN-FET) stands out among the most promising architectures for future MOSFETs. While a fair amount of the published literature has focused on the static performance of JN-FETs, detailed numerical investigation of their RF small-signal and noise behavior on the device level still lacks. This paper reports the ac and noise characteristics of JN-FETs with different gate lengths and shows that due to the improved electrostatic control and better immunity to short-channel effects, several key quantities such as the drain/gate excess noise factors and correlation coefficient demonstrate classical long-channel behavior for channel lengths as small as 16 nm. The results are obtained using an in-house simulation tool, which provides the deterministic and self-consistent solution of the multi-subband Poisson, Schrodinger, and Boltzmann equations.