Abstract
Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switching devices and investigate effective means to safely, efficiently, and reliably utilize the WBG devices. This paper aims to provide engineers in the power engineering field a comprehensive understanding of WBG switching devices’ driving requirements, especially for mid- to high-power applications. First, the characteristics and operating principles of WBG switching devices and their commercial products within specific voltage ranges are explored. Next, considerations regarding the design of driving circuits for WBG switching devices are addressed, and commercial drivers designed for WBG switching devices are explored. Lastly, a review on typical papers concerning driving technologies for WBG switching devices in mid- to high-power applications is presented.
Highlights
In modern industries, requirements for the performance of various power electronicbased converters are becoming stricter in terms of capacity, voltage level, efficiency, and size
The desire of replacing conventional Si-based switching devices with WBG materialbased switching devices for higher switching frequency and efficiency has led to intensive research on the driving technologies of gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)
This paper has addressed the characteristics and operating principles of GaN HEMT and SiC MOSFET
Summary
Requirements for the performance of various power electronicbased converters are becoming stricter in terms of capacity, voltage level, efficiency, and size (switching frequency related issues). GaN HEMTs offer the highest efficiency and switching speed, and SiC MOSFETs provide the highest voltage, current, and temperature capabilities. The cascode GaN HEMT, as shown, is normally off because it consists of a D-mode GaN HEMT and an additional high-speed low-voltage Si MOSFET, and it can be turned on with appropriate gate-source voltage applied on the Si MOSFET. When comparing the listed commercial devices, we can see that it is common for SiC MOSFETs to possess much higher current capabilities than those of GaN HEMTs, which makes SiC devices more suitable for high-power applications such as high-speed railway, power transmission, industrial drives, smart grid, and wind power generation.
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