Abstract
A device suitability analysis is performed herein by comparing the performance of a silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (MOSFET) and a gallium nitride (GaN) high-electron mobility transistor (HEMT), which are wide-bandgap (WBG) power semiconductor devices in induction heating (IH) systems. The WBG device presents advantages such as high-speed switching owing to its excellent physical properties, and when it is applied to the IH system, a high output power can be achieved through high-frequency driving. To exploit these advantages effectively, a suitability analysis comparing SiC and GaN with IH systems is required. In this study, SiC MOSFET and GaN HEMT are applied to the general half-bridge series resonant converter topology, and comparisons of the conduction loss, switching loss, reverse conduction loss, and thermal performance considering the characteristics of the device and the system conditions are performed. Accordingly, the device suitability in an IH system is analyzed. To verify the device conformance analysis, a resonant converter prototype with SiC and GaN rated at 650 V is constructed. The analysis is verified by an experimental comparison of power loss and thermal performance.
Highlights
Owing to the physical limitations of Si, power semiconductor devices are increasingly limited in the development of Si-based devices
A silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistor (MOSFET) and a gallium nitride (GaN) high-electron mobility transistor (HEMT) were applied to the half-bridge resonant converter topology, and their device suitability was analyzed in the induction heating (IH) system
The reverse conduction loss was small because the reverse conduction time during the dead the thermal performances of the GaN and SiC devices, a lower thermal performance at the same time was significantly reduced when the snubber capacitor was added
Summary
Owing to the physical limitations of Si, power semiconductor devices are increasingly limited in the development of Si-based devices. High-speed switching is advantageous with regard to power density and cost because it can reduce the size of the system in various applications Because of these advantages, studies have been conducted to compare the performance of WBG device-based and. A SiC MOSFET and a GaN HEMT were applied to the half-bridge resonant converter topology, and their device suitability was analyzed in the IH system For this purpose, we analyzed the conduction loss of each device considering the junction temperature of the device, the switching loss considering the gate resistance and snubber capacitor, and the reverse conduction loss considering the reverse conduction current. The proposed loss analysis and device suitability analysis are validated by various experimental results based on a constructed half-bridge series resonant converter for a 2-kW IH system using 650-V rated GaN and SiC
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