Abstract
Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the era of nanotechnology. In SET, only one electron can tunnel at a time from source to drain via a Quantum Dot island. MATLAB was used to calculate the current-voltage (I-V) characteristics. In MATLAB, due to its reasonable accuracy, Monte Carlo method is used to simulate SET. Monte Carlo method follows the tunneling path of a representative number of electrons which gives a clear picture of the inner working of single electron circuits. Single Electron Transistor Spin property analysis using COMSOL.
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