Abstract
Reverse-bias currentnvoltage (IRnV ) characteristics of Al-n / GaAs Schottky diodes have been studied in a temperature range from 92 to 333 K. The results are explained on the basis of phonon-assisted tunnelling model. It is shown that the temperature dependence of the reverse current IR could be caused by the temperature dependence of the electron tunnelling rate from traps in the metalnsemiconductor interface to the conduction band of the semiconductor. Temperature-dependent IRnV data obtained by Zhang et al [J. Appl. Phys. 2006; 99: 023703] and Osvald et al [Microelectron. Eng. 2005; 81: 181] for Schottky diodes fabricated on n-GaN are reinterpreted in terms of a phonon-assisted tunnelling model. The temperature and bias voltages dependences of an apparent barrier height (activation energy) observed by other researchers are also explained in the framework of this model.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
