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Abstract
Ni/diamond Schottky diodes were fabricated on boron-doped homoepitaxial diamond films. Temperature dependence on electrical characteristics of the Schottky diodes was investigated in a temperature range 148 to ∼448 K. The current–voltage characteristics of the diodes show excellent rectification behavior. Temperature dependence on the ideality factor and apparent barrier height was determined, including the effect of series resistance. The evaluated ideality factor was observed to decrease from 1.78 to 1.05, while the apparent barrier height increased from 0.95 to 1.55 eV in this temperature range. The temperature dependence of the forward characteristics can be well explained by thermionic-field-emission theory at low temperature and thermionic emission theory at high temperature, respectively. A possible mechanism of the correlation of the ideality factor and barrier height has been proposed.
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