RETRACTED: Impact of SOI thickness on device performance and gate oxide reliability of Ni fully silicide metal-gate strained SOI MOSFET

Abstract

This article has been retracted: please see Elsevier Policy on Article Withdrawal ( http://www.elsevier.com/locate/withdrawalpolicy ). This article has been retracted at the request of the Editor-in-Chief. A large part of this article significantly overlaps a paper by the same authors that has already been published in IEEE Electron Device Lett., vol. 31, no. 2, pp. 165–167, Feb. 2010, http://DOI:10.1109/LED.2009.2037900 and did not cite the earlier paper, even though the article is an extended version of that paper. One of the conditions of submission of a paper for publication is that authors declare explicitly that the paper is not under consideration for publication elsewhere. As such this article represents an abuse of the scientific publishing system. The scientific community takes a very strong view on this matter and apologies are offered to readers of the journal that this was not detected during the submission process. The authors also apologize and declare that they misunderstood the meaning, as well as the copyright consequences of the submission conditions for an extended article.