Abstract
We study the effect of local charge irradiation on carbon nanotube field effect transistors (CNT-FET), in order to determine the nature of the degradation of the electrical characteristics of CNT-FETs exposed to charged beams, as for example it happens during the fabrication of the device. The study is performed by analyzing the extension of the charge distribution by means of electrical force microscopy (EFM) images, by Monte Carlo simulation of electron trajectories, and by comparing both with the change of the electrical characteristics of the devices after local irradiation with an electron beam under different conditions (beam energy and dose). The CNT-FET device characteristics show a temporary degradation, which depends on the beam energy and irradiated area, and is produced by the charging of the underlying silicon.
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