Abstract
Hole tunnelling in Be-doped GaAs/AlAs double barrier quantum well structures, grown by molecular beam epitaxy on the (1 1 0) GaAs surface, have been investigated. Fewer resonances are observed in the current-voltage characteristic of the device than in the characteristics of similar devices grown on (1 0 0) and (3 1 1)A oriented substrates. High magnetic fields are used to examine the anisotropic in-plane energy dispersion of the QW states of the (1 1 0) diode. The dispersion of one of the resonances is found to be much greater than has been observed in (1 0 0) and (3 1 1)A oriented devices.
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