Abstract
Resonant Raman scattering spectra for ZnS epilayers grown by hot-wall epitaxy have been studied extensively. With a 325nm He–Cd laser as the excitation source, three resonant Raman lines were observed in photoluminescence spectra. The temperature dependence of energy peak position, half width, Raman shift and intensity of three resonant Raman lines which were related to the temperature dependence of the energy gap of ZnS were analyzed. The values of the longitudinal-optical (LO) phonon energy between neighboring resonant Raman lines were confirmed to be very close to LO phonon energy of bulk ZnS.
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