Abstract
Experimental evidence is given for the photoadsorption of uranyl ions in solutions, under the selective action of laser radiation. The effect was studied in two different systems involving uranyl solutions in contact with the surfaces of a ZnSe plate or a silicon wafer, respectively. Infrared spectrophotometrical methods as well as the measured value of the dielectric breakdown field showed in both cases an accumulation of resonant ions on the irradiated sites.
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