Abstract
We report solid source molecular beam epitaxy growth of visible, 650-nm range, resonant cavity light-emitting diodes. Devices operating at red wavelengths utilise an (Al x Ga 1− x ) y In 1− y P active region and Al x Ga 1− x As distributed Bragg reflectors. Components with an emitting window of 84 μm exhibit a record high external quantum efficiency of 6.5% and output power of 2 mW.
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