Modeling and optimization of resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy

Abstract

Monolithic top emitting resonant cavity light-emitting diodes (RC-LEDs) operating at 660 and 880 nm have been prepared using solid-source molecular beam epitaxy (SSMBE) growth. Transfer matrix based modelling together with a self-consistent model have been used to optimise the devices’ performances. Intermediate-composition barrier-reduction layers were introduced in the distributed Bragg reflector (DBR) mirrors for improving the I– V characteristics and the cavity and mirrors were detuned aiming at maximum extraction efficiency. The fabricated devices showed line widths below 15 nm, CW light power output of 8 and 22.5 mW, and wall-plug efficiencies of 3% and 14.1% in the 660 nm and 880 nm ranges, respectively, while the simulations indicate significant performance improvement possibilities.