Resistivity of manganese doped GaN grown by near equilibrium ammonothermal (NEAT) method

Abstract

Resistivites of Mn-doped GaN crystals grown by the near equilibrium ammonothermal (NEAT) method were evaluated. C-plane, Mn-doped GaN wafers were fabricated from bulk crystals by grinding off an undoped seed crystal. The Mn concentrations were in the range of 7 × 1017 to 1.2 × 1019 cm−3. Secondary ion mass spectroscopy (SIMS) was utilized to quantify Mn concentrations and other impurities, including O, Si, C, H, Mg, Na, and Fe. Some Mn-doped GaN turned out to be conductive, indicating the resistivity was determined by the concentration balance of the impurities.