Abstract
The hole-mediated magnetism in Mn-doped GaN nanowires is investigated using the k·p method and the mean-field model. The Curie temperature (TC) as a function of the hole density p can be explained based on the calculated band structure of the nanowires. For low Mn concentration, TC vs. p shows many peaks stem from the peaks of the one-dimensional density of states. When the Mn concentration is increased, TC is enhanced, and the peaks of TC versus p are fully merged by the thermal distribution of the holes in the valence band. It is found that the Curie temperature in Mn-doped GaN wire can be higher than room temperature, in agreement with experiment [Song et al., J. Phys.: Condens. Matter 17, 5073 (2005)]. The ferromagnetism in Mn-doped GaN wire is slightly anisotropic due to the small spin-orbit coupling.
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