Abstract
Polycrystalline silicon layers of area 8 cm 2 and thickness t ranging from 100 μm to 2 mm were prepared on alumina substrates by plasma spraying silicon powder. For t > 500 μm, these layers could be detached from the substrate. The conductivity could be made n or p type by in situ doping. The microstructure, impurity content and resistivity as a function of both phosphorus and boron doping concentrations were studied. The effect of heat treatment on the resistivity, Hall mobility and the photoconductivity is reported. The data are explained qualitatively on the basis of existing models of the transport behaviour of polycrystalline silicon.
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