Abstract
We report on the resistive switching effect in metal-insulator-metal (MIM) structures Pt/Ta2O5+x/Ta with over-stoichiometric tantalum oxide film. These devices exhibit forming-free behavior, Roff/Ron ratio>10 and high endurance (108cycles). Based on the experimentally observed correlation between the applied voltage and the resistance changes (bias memory effect - BME), the resistive switching model for this kind of devices is proposed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
