Abstract
We report on the resistive switching effect in metal-insulator-metal (MIM) structures Pt/Ta2O5+x/Ta with over-stoichiometric tantalum oxide film. These devices exhibit forming-free behavior, Roff/Ron ratio>10 and high endurance (108cycles). Based on the experimentally observed correlation between the applied voltage and the resistance changes (bias memory effect - BME), the resistive switching model for this kind of devices is proposed.
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