Abstract
Resistive switching (RS) effect has attracted enormous attention due to its potential for application of resistive random access memory with fast speed, good scalability and high endurance. NiO is a model system of RS effect, in which the formation/rupture of nickel filaments is directly related to the RS effect. In fact, it is still controversial that the RS effect in NiO films should be attributed to whether a single filament or multi-filaments. In this work, we demonstrate that multi-filaments are involved in the RS process by means of conventional I-V measurements, conductive atomic force microscopy and transmission electron microscopy. Furthermore, we observed the interesting tunneling magnetoresistance in this system for the first time, which not only reveals the mechanism of multi-filaments, but also provides a new way for multifunctional devices.
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