Abstract
Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS2-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage. A decent off/on ratio, high retention time, and large endurance of 1.28 × 102, 105 sec and 1000 voltage sweeps were recorded respectively. Double logarithmic curve satisfy the trap controlled space charge limited current (TCSCLC) model in high resistance state (HRS) and ohmic model in low resistance state (LRS). Bendability test at various bending diameters (50-2 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device.
Highlights
Graphene was the first two dimensional (2D) material to be found with intriguing electrical properties and unique chemical structure that led to the discovery of various materials of its kind like the transition metal dichalcogenides (TMDs)[1]
Edges of individual layers stacked over one another can be observed near the periphery of MoS2 flakes in High Resolution (HR) transmission electron microscope (TEM) image of Fig. 1(d)
Our work has demonstrated resistive switching effect of a hybrid organic-inorganic nanocomposite of a few layered MoS2 flakes passivized with a polyvinyl alcohol (PVA) polymer matrix
Summary
Graphene was the first two dimensional (2D) material to be found with intriguing electrical properties and unique chemical structure that led to the discovery of various materials of its kind like the transition metal dichalcogenides (TMDs)[1]. In recent years quasi 2D materials like WSe2, WS2, MoS2 and MoSe2 are under intensive research as they have a unique potential to be used in nanotechnology and nanoscience for various applications These materials are poised of two dimensional set of sandwiched sheets. Interlayer atoms of stacked layers are covalently bonded to each other while weak Van der Waals forces are responsible for holding these two layers together[6] Among these 2D materials, MoS2 is a very attractive candidate with an immense potential to be used in electronic device applications because of its suitable quantum confinement, high mobility owing to direct band gap of 1.85 eV in monolayer, and indirect bandgap of 1.29 eV in multilayer[7]. Scale bar of above images have been redrawn for better visibility
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