Enhanced resistive switching in all-printed, hybrid and flexible memory device based on perovskite ZnSnO3 via PVOH polymer

Abstract

Abstract Resistive switching effect has been explored in the hybrid nanocomposite of organic-inorganic materials by fabricating all printed memristive device on a flexible PET substrate. Configuration of as fabricated device is Ag/PVOH ZnSnO 3 /Ag. Extremely uniform and high quality bottom Ag electrodes were deposited by reverse offset printing. Active layer of PVOH ZnSnO 3 nanocomposite was deposited by electrohydrodynamic (EHD) atomization and top Ag electrode was deposited by a non-contact printing technique of EHD patterning. Electrical and mechanical characterization showed that resistive switching characteristics of ZnSnO 3 were remarkably enhanced by adding PVOH polymer in it. The fabricated device showed bipolar, nonvolatile and rewritable memory behavior at low operating voltage. A high off/on ratio, endurance and retention time of > 10 2 , 500 voltage cycles and 36 h respectively were recorded without any substantial change in either HRS or LRS. The fabricated memory device showed remarkable mechanical robustness when tested against 1500 bending cycles.