Abstract
Emerging resistive switching devices are believed to play a vital role in realizing ultra-dense nanocrossbar arrays for the next generation mass storage memory. This work reports the resistive switching effect in organic-inorganic hybrid nanocomposite of perovskite oxide zinc stannite nanocubes (ZnSnO3 NCs) and a polymer Poly(methyl methacrylate) (PMMA). The functional layer was sandwiched between indium tin oxide (ITO) and silver (Ag) electrodes on a flexible PET substrate. The obtained electrical results clearly exhibited that the addition of PMMA in ZnSnO3 NCs enhanced electrical endurance (500 biasing cycles), retention time (∼104 s), switching ratio (∼103) and repeatability of our memory device. Moreover the effect of device size on the resistive switching characteristics of this hybrid nanocomposite is also explored by varying the diameter of top electrode. The whole device fabrication except bottom layer was done through all printed technology such as electrohydrodynamic atomization (EHDA) and inkjet reciprocating head. The developed memory device displayed characteristic bipolar, nonvolatile and rewritable memory behavior at a low operating voltage. The obtained results of chemical, structural, electrical and surface morphology are added to completely understand the impact of adding a polymer on the switching characteristics of perovskite NCs.
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