Abstract
To effectively improve the uniformity of switching behavior in resistive switching devices, this study developed magnesium zirconia nickel (MZN) nanorods grown on ITO electrodes through hydrothermal method. The field emission scanning electron microscope image shows the NR formation. Al/MZN NR/ITO structure exhibits forming-free and bipolar resistive switching behaviors. MZN NRs have relatively higher ON/OFF ratio and better uniformity compared with MZN thin film. The superior properties of MZN NRs can be attributed to its distinct geometry, which leads to the formation of straight and extensible conducting filaments along the direction of MZN NR. The results suggest the possibility of developing sol–gel NR-based resistive memory devices.
Highlights
Resistive random access memory (RRAM) is one of the strong candidates of next-generation nonvolatile memories (NVM) due to its simple metal/insulator/metal structure, low power consumption, fast switching speed, simple fabrication, and high scalability [1,2,3]
The atomic percentage of elements magnesium, zirconate, nickel, and oxygen in thin films atomic percentage of elements magnesium, zirconate, nickel, and oxygen in thin films verified atomic percentage of elements magnesium, zirconate, nickel, and oxygen in magnesium zirconia nickel (MZN) thin films verified verified by XPis spectra is 9.2%,21.2%, 21.2%,and
MZN NRs were grown on ITO/glass substrate through hydrothermal method
Summary
Resistive random access memory (RRAM) is one of the strong candidates of next-generation nonvolatile memories (NVM) due to its simple metal/insulator/metal structure, low power consumption, fast switching speed, simple fabrication, and high scalability [1,2,3]. The distinct geometry of nanorods (NRs) can control the distribution of oxygen vacancies due to the formation of straight and extensible conducting filaments along the direction of each NRs, thereby improving the uniformity of memory devices [9,11]. In such devices, nanostructure materials, such as GZO NRs [12], NiO/Pt nanowires [13], and Ni–NiO core–shell nanowires [14], have been reported to show resistive switching. MZN good retention updevice to 104 exhibits sexhibits and high ratio ofto more device good retention up to 1044 ssthan and 10 high
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
