Abstract
Resistive switching devices are promising candidates to replace today’s nonvolatile memory device, and find applications in neuromorphic computing. In this study, bipolar resistive switching (BRS) and unipolar resistive switching (URS) behaviors at room temperature were shown for Ag/Ti/CeO2/Pt devices. Without forming step, the device exhibited low set voltage (about 0.3 V) and reset voltage (about −0.3 V to −0.6 V) in BRS behavior, which is beneficial for nonvolatile memory application. The I-V characteristics were analyzed, and it was concluded that the switching mechanism in BRS is dominated by the electrochemical metallization mechanism (ECM), while in URS, conduction is dominated by thermochemical mechanism (TCM).
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