The effect of bottom LaB6 electrode and La2O3 interlayer on resistance switching in devices based on Li‐doped ZnO films

Abstract

Resistance switching (RS) characteristics of Al/ZnO:Li/LaB6 and Al/ZnO:Li/La2O3/LaB6 devices in which LaB6 and lithium‐doped ZnO (ZnO:Li) films are regarded as shallow work function metal and p‐type semiconductor, respectively, are studied. The alternation from bistable unipolar memory switching (URS) to monostable threshold switching (MTS) in the Al/ZnO:Li/LaB6 device is observed. These two switching behaviors can be activated separately depending on the polarity of applied dc voltage: with a positive polarity the URS behavior is measured, while the MTS behavior is observed with a negative polarity. With increase in the number of switching cycles, the MTS and URS behaviors irreversibly transform to bipolar resistance switching (BRS) behavior. The Al/ZnO:Li/La2O3/LaB6 device shows only the BRS behavior, but after certain number of cycles device serves as a rectifying diode. On the basis of the I–V and C–V characteristics, it is concluded that RS properties depend on the barrier height and reactivity between LaB6 metal and ZnO:Li oxide.