Abstract
With the advent of the internet era, wearable electronic devices and flexible electronic technology are rapidly emerging, and new resistive random access memory (RRAM) based on flexible substrates have thus gained extensive attention. Here, the flexible Bi0·95Er0·05FeO3/ZnO/La0·66Sr0·34MnO3 (BEFO/ZnO/LSMO) heterostructure is prepared on Mica substrate using the sol-gel method. The high resistance state (HRS) to low resistance state (LRS) ratio consistently surpasses 102 under the flat and the 15 mm bending radius state. There is no significant change in the resistive switching (RS) behavior after 30 I–V curve cycles and 103 write/erase operations on the BEFO/ZnO/LSMO heterostructure, which reflects excellent stability. In addition, the device still works properly at 175 °C for dynamic conversion between HRS and LRS. The observed RS behavior in the BEFO/ZnO/LSMO heterostructure is attributed to ion migration and alterations in the potential barrier height at the interfaces. These results suggest that the BEFO/ZnO/LSMO heterostructure based on a flexible Mica substrate plays a crucial role in the development of next-generation portable and flexible electronic systems due to its excellent flexibility and thermal stability.
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