Abstract
The polycrystalline strontium ferrate titanate (SrFe0.1Ti0.9O3, SFTO) thin films have been successfully prepared by chemical solution method. By analyzing the current-voltage (I–V) characteristics, we discuss the conduction mechanism of SFTO. It is found that the number of oxygen vacancy defects is increased by Fe ion doping, making SFTO be with better resistive switching property. Fe ion doping can also enhance the absorption of strontium titanate to be exposed to visible light, which is associated with the change of energy band. The band gap width (2.84 eV) of SFTO films is figured out, which is less than that of pure strontium titanate. Due to more oxygen vacancy defects caused by Fe ion doping, the band gap width of strontium titanate was reduced slightly. The defect types of SFTO thin films can be determined by electron paramagnetic resonance spectroscopy. In addition, we analyzed the energy band and state density of SFTO by first-principles calculation based on density functional theory, and found that Fe ion doping can reduce the band gap width of strontium titanate with micro-regulation on the band structure. A chemical state of SFTO was analyzed by X-ray photo electron spectroscopy. At the same time, the structure and morphology of SFTO were characterized by X-ray diffraction and scanning electron microscope. This study deepens further understanding of the influence of Fe ion doping on the structure and properties of strontium ferrate titanate, which is expected to be a functional thin film material for memristor devices.
Highlights
During the past few decades, a large number of experimental and theoretical studies on ABO3 perovskite compounds have been carried out, especially the typical material SrTiO3
Peaks of 23.3° (100), 32.5° (110), 46.6° (200), and 58.2° (211) crystal planes of SFTO were observed obviously which are corresponding to JCPDS No 35-0734 from the Joint Committee on Power Diffraction Standards (JCPDS) database, indicating that SFTO thin film is crystallized in cubic structure
Polycrystalline strontium ferrate titanate thin films were successfully prepared on fluorine doped tin oxide (FTO)/Glass substrate by chemical solution deposition
Summary
During the past few decades, a large number of experimental and theoretical studies on ABO3 perovskite compounds have been carried out, especially the typical material SrTiO3. Strontium ferrate titanate has attracted more and more attention in studying defect chemistry, carrier transport properties, and ferroelectric [17,18]. Compared with the pure SrTiO3, defect state like oxygen vacancies in strontium ferrate titanate sustains charge balance due to the diverse valence states between Fe and Ti ions. Ferromagnetic properties in perovskites depend on oxygen vacancies and defects and the annealing atmosphere and temperature [21]. It is the first time to utilize the first-priciples theoretical calculation based on density functional theory (DFT) for investigating the electronic structure and state density of perovskite material SrFexTi1–xO3–σ with 10% Fe ions to elaborate the experimental results, which can give us enlightenment to explore and verify the effect of doping in band gap regulation
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