Abstract
We report on the resistive switching (RS) properties of Al/Gd1–xCaxMnO3 (GCMO)/Au thin-film memristors. The devices were studied over the whole calcium substitution range x as a function of electrical field and temperature. The RS properties were found to be highly dependent on the Ca substitution. The optimal concentration was determined to be near x = 0.9, which is higher than the values reported for other similar manganite-based devices. We utilize an equivalent circuit model which accounts for the obtained results and allows us to determine that the electrical conduction properties of the devices are dominated by the Poole–Frenkel conduction mechanism for all compositions. The model also shows that lower trap energy values are associated with better RS properties. Our results indicate that the main RS properties of Al/GCMO/Au devices are comparable to those of other similar manganite-based materials, but there are marked differences in the switching behavior, which encourage further exploration of mixed-valence perovskite manganites for RS applications.
Highlights
In recent years, many memory technologies have emerged with the goal to replace traditional charge storage-based memory technologies, which are approaching their physical limits of scalability
A lot of promising research, including many of the mentioned demonstrations have been performed using mixed-valence perovskite manganites R1−xAxMnO3, where R is a rare-earth cation and A is an alkali or alkaline earth cation. These compounds are versatile for resistive switching (RS) applications since as the concentration of divalent A cations x changes, the compounds go through significant changes in the RS properties
The low-voltage current read was set at 450 mV, which was determined to be in the Ohmic region for all calcium concentrations
Summary
Many memory technologies have emerged with the goal to replace traditional charge storage-based memory technologies, which are approaching their physical limits of scalability. A lot of promising research, including many of the mentioned demonstrations have been performed using mixed-valence perovskite manganites R1−xAxMnO3, where R is a rare-earth cation and A is an alkali or alkaline earth cation. These compounds are versatile for RS applications since as the concentration of divalent A cations x changes, the compounds go through significant changes in the RS properties. Manganite-based RS devices usually consist of metal-oxidemetal layer structures, in which one of the metal-oxide interfaces acts as an active electrode where the RS happens. The inset shows the measurement configuration and the active aluminum switching interface with the oxygen-deficient GCMO region and the AlOx barrier layer. The low-voltage current read was set at 450 mV, which was determined to be in the Ohmic region for all calcium concentrations
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