Abstract
Polycrystalline LaSmOx (LSO) thin films were prepared by using RF sputtering and the bipolar resistive switching (BRS) properties in the Al/LSO/ITO structure were investigated. The impact of Ar/O2 ratio, film thickness and post metal annealing (PMA) condition on the resistive switching (RS) properties were also studied. The conductive mechanism is mainly dominated by the numbers of oxygen vacancies, which can be controlled through a different deposition atmosphere (Ar/O2) ratio and film thickness. In addition, the resistive switching characteristics can be improved by post metal annealing treatment due to film densification and the formation of AlOx interface layer in between the top electrode and the LaSmOx thin film. The optimized RRAM device revealed a profound improvement in the switching cycles, which can be as high as 4580.
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