Resistive memory devices based on novel functionalized poly(aryl ether)s with pendant azobenzene

Abstract

We designed and synthesized two novel azobenzene functionalized poly(aryl ether)s (PAEs), PAE-azo-1 and PAE-azo-2, from a new azobenzene monomer via nucleophilic aromatic substitution polycondensation. This direct polymerization approach via azobenzene monomer has the advantages of controlling the distribution and amount of the azobenzene chromophores in the polymer. Both of the polymers showed very good thermal stability and excellent solubility for future application in the electronics industry. These polymers were fabricated as films by simple spin-coating and both of them were then prepared as sandwich memory devices. PAE-azo-1 and PAE-azo-2 exhibit write-once-read-many-times-type memory behavior, which can be encoded as “0” and “1,” and possess the low operation voltage below −3.0 V. The memory mechanism was investigated through ultraviolet–visible optical absorption spectrum and the cyclic voltammetry. These obtained results indicate that the novel azobenzene functionalized PAEs are a promising candidate for low power consumption and high-performance materials for data storage.