Abstract
Core–shell γ-Fe2O3/Ni2O3 nanoparticles are synthesized by chemical co-precipitation method. Resistive switching memory behaviors, which have resistance ON/OFF ratio of ∼102 and excellent retention property, are observed in the Au/HfSiO/γ-Fe2O3/Ni2O3/HfSiO/Pt structure. Space charge limited current (SCLC) mechanism, which is supported by the fitting current–voltage results, is employed to know the resistive switching memory effects. The transportation of Oxygen vacancy Vo2+, oxygen ion O2−, recombination of oxygen atom and drive of external electric field are responsible for the ON or OFF states observed in device.
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