Abstract
Composite particles (CPs) with an average diameter of 100μm, containing the amorphous silicates, but crystal structures are dominated by the NaS2, Al2S3, Al0.55Mo2S4 and MoO3, are synthesized using hydrothermal method. Bipolar resistive switching (RS) memory behaviors with favorable resistance ON/OFF ratio, high retention and voltage cycling endurance performance are observed in the CPs-based device. The RS memory behaviors can be well controlled by stressing visible light at room temperature. The traps/deep traps based physical modes are proposed to interpret the RS memory behaviors for the quasi-bulk silicate-based composites. Different from conventional nano-scale RS memory device, the discovery of the RS memory behavior of micro-scale silicate composites may provide one new insight into the mechanism of resistive switching behavior.
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